A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer-Reference-Cited by-同舟云学术

A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer

Published:2007-09-15 Issue:6 Volume:102 Page:063306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Raballand V.,Cartry G.,Cardinaud C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2784016

Reference48 articles.

1. Low dielectric constant materials for microelectronics

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3. Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition

4. Low dielectric constant polymers for microelectronics

5. Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology

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