Effect of fluorine contamination on barrier metal oxidation-Reference-Cited by-同舟云学术

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Effect of fluorine contamination on barrier metal oxidation

Published:2010-03 Issue:3 Volume:87 Page:370-372
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ozaki S.,Nakata Y.,Kobayashi Y.,Nakamura T.,Iba Y.,Fukuyama S.,Watatani H.,Ohkura Y.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Effects of Etch Rate on Plasma-Induced Damage to Porous Low-kFilms

2. Etch and strip induced material modification of porous low-k (k=2.2) dielectric

3. High manufacturability Cu multilevel interconnects featuring hybrid-NCS structure

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on Ashing-less Dry Etching Process to Eliminate Q-time Defect Formation;2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2023-05-01

2. Interaction of F atoms with SiOCH ultra-low-kfilms: I. Fluorination and damage;Journal of Physics D: Applied Physics;2015-03-31

3. Effects of fluoride residue on thermal stability in Cu/porous low-k interconnects;AIP Conference Proceedings;2014

4. Effects of fluoride residue on Cu agglomeration in Cu/low-k interconnects;Microelectronic Engineering;2011-05

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