Etch and strip induced material modification of porous low-k (k=2.2) dielectric-Reference-Cited by-同舟云学术

Etch and strip induced material modification of porous low-k (k=2.2) dielectric

Published:2004-10 Issue:1-4 Volume:76 Page:25-31
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Furukawa Y.,Wolters R.,Roosen H.,Snijders J.H.M.,Hoofman R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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2. ITRS 2003 update, Semiconductor Industry Association, San Jose, CA, 2003

3. Low dielectric constant materials for microelectronics

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5. Material modification of the patterned wafer during dry etching and strip determined by XPS

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