Study on Ashing-less Dry Etching Process to Eliminate Q-time Defect Formation-Reference-Cited by-同舟云学术

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Study on Ashing-less Dry Etching Process to Eliminate Q-time Defect Formation

Published:2023-05-01 Issue: Volume: Page:
ISSN:
Container-title:2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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Author:

Myeong Jinbum¹,Kang Joon Young²,Sook Kim Hyun¹,Kim Jinwoong²,Kim Yeji³,Kim Kang Uk²,Sohn Seokyong¹,Choi Ohduk¹,Kang Bokoo¹,Heo Min¹,Yim Jongsoo¹

Affiliation:

1. Quality Assurance Team Samsung Electronics Co., Ltd,Gyeonggi-do,Republic of Korea

2. Process Architecture Team Samsung Electronics Co., Ltd,Gyeonggi-do,Republic of Korea

3. Yield Enhancement Team Samsung Electronics Co., Ltd,Gyeonggi-do,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10121052/10121025/10121148.pdf?arnumber=10121148

Reference4 articles.

1. Study on the etching characteristics of amorphous carbon layer in oxygen plasma with carbonyl sulfide

2. Study of Solving the Outgas Induced Defect in Metal Hard Mask All-in-One Etch Process

3. Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures;wolf;Dry Etching for VLSI,1996

4. Effect of fluorine contamination on barrier metal oxidation

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