Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes-Reference-Cited by-同舟云学术

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

Published:2008-01 Issue:1 Volume:85 Page:2-8
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wen Huang-Chun,Majhi Prashant,Choi Kisik,Park C.S.,Alshareef Husam N.,Rusty Harris H.,Luan Hongfa,Niimi Hiro,Park Hong-Bae,Bersuker Gennadi,Lysaght Patrick S.,Kwong Dim-Lee,Song S.C.,Lee Byoung Hun,Jammy Raj

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference38 articles.

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3. Impact of gate workfunction on device performance at the 50 nm technology node

4. Fermi-level pinning with sub-monolayer MeOx and metal gates [MOSFETs];Samavedam;Electron Devices Meeting, 2003. IEDM ’03 Technical Digest. IEEE International,2003

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