Author:
Tang Shih Hsuan,Kuo Chien I.,Trinh Hai Dang,Hudait Mantu,Chang Edward Yi,Hsu Ching Yi,Su Yung Hsuan,Luo Guang-Li,Nguyen Hong Quan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition;Materials;2019-05-02
2. Simulation and Analysis of Interface Properties Due to Variation of Gate Oxide Thickness in Au/Al2O3/n-GaSb MOSCAP;Advanced Science Letters;2014-03-01
3. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100);physica status solidi (RRL) - Rapid Research Letters;2013-08-16
4. Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01
5. In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-09