Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2431567
Reference13 articles.
1. Uniform junction temperature AlGaAs/GaAs power heterojunction bipolar transistors on silicon substrates
2. Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits
3. Microwave performance of GaAs-on-Si MESFETs with Si buffer layers
4. InP/InGaAs double-heterojunction bipolar transistors grown on [100] Si by metalorganic chemical vapor deposition
5. A small-signal linear equivalent circuit of HEMTs fabricated on GaAs-on-Si wafers
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2. Effect of growth temperature of GaAsx Sb1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate*;Chinese Physics B;2019-11-01
3. Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core–Shell Nanowires Grown on Silicon;Nano Letters;2019-06-17
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