Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices-Reference-Cited by-同舟云学术

Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

Published:2006-08 Issue:4-5 Volume:9 Page:444-448
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Akatsu Takeshi,Deguet Chrystel,Sanchez Loic,Allibert Frédéric,Rouchon Denis,Signamarcheix Thomas,Richtarch Claire,Boussagol Alice,Loup Virginie,Mazen Frédéric,Hartmann Jean-Michel,Campidelli Yves,Clavelier Laurent,Letertre Fabrice,Kernevez Nelly,Mazure Carlos

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. ITRS (International Technology Roadmap of Semiconductors) 2005 Edition.

2. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

3. High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

4. See Umicore's web site: 〈http://www.umicore.com〉.

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