Effect of IZO buffer layer on the electrical performance of Ge-doped InZnO thin-film transistors-Reference-Cited by-同舟云学术

Effect of IZO buffer layer on the electrical performance of Ge-doped InZnO thin-film transistors

Published:2015-11 Issue: Volume:147 Page:19-22
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Im Yong Jin,Kim SangJo,Lim Yooseong,Park Chan Hee,Ha Seung Soo,Yi Moonsuk

Funder

Ministry of Education, Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. S.I. Kim, C.J. Kim, J.C. Park, I. Song, S.W. Kim, H. Yin, E. Lee, J.C. Lee and Y. Park, High Performance Oxide Thin Film Transistors with Double Active Layers, in: Electron Devices Meeting 2008 IEEE International (2008) 1–4.

2. Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness

3. Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5

4. Trapping Time Characteristics of Carriers in a-InGaZnO Thin-Film Transistors Fabricated at Low Temperatures for Next-Generation Displays

5. Device characteristics of Ti–InSnO thin film transistors with modulated double and triple channel structures

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2. Properties optimization with high nitrogen content doping for InGaZnO films deposited by reactive sputtering with a GaN-embedded cermet target;Materials Science in Semiconductor Processing;2018-11

3. Effect on electrical performance of titanium co-sputtered IZO active-channel thin-film transistor;Journal of the Society for Information Display;2015-08