Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4828674
Reference28 articles.
1. P-41: Investigation of the Photon-Enhanced Bias Instability of InGaZnO TFTs for the Application of Transparent AM-OLED Displays
2. 4.4: A 6-inch Field Sequential Blue Phase Mode LCD with Integrated Driver using Highly Reliable Oxide Semiconductor
3. Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
4. SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator
5. High-mobility low-temperature ZnO transistors with low-voltage operation
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