Device characteristics of Ti–InSnO thin film transistors with modulated double and triple channel structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature
2. A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization
3. Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature
4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
5. Role of O2/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process
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1. Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability;IEEE Electron Device Letters;2022-08
2. Fully solution-processed InSnO/HfGdO X thin-film transistor for light-stimulated artificial synapse;Flexible and Printed Electronics;2022-02-02
3. Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C;Crystals;2021-02-05
4. Device Performance Improvement of Transparent Thin-Film Transistors With a Ti-Doped GaZnO/InGaZnO/Ti-Doped GaZnO Sandwich Composite-Channel Structure;IEEE Transactions on Electron Devices;2017-06
5. Effect of IZO buffer layer on the electrical performance of Ge-doped InZnO thin-film transistors;Microelectronic Engineering;2015-11
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