Role of O2/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process-Reference-Cited by-同舟云学术

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Role of O2/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process

Published:2011-12 Issue:5 Volume:520 Page:1475-1478
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim Won,Lee Sang-Hyuk,Bang Jung-Hwan,Uhm Hyun-Seok,Park Jin-Seok

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structure

3. A new poly-Si thin-film transistor with poly-Si/a-Si double active layer

4. Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers

5. High Reliable and Manufacturable Gallium Indium Zinc Oxide Thin-Film Transistors Using the Double Layers as an Active Layer

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1. Investigation of Optical and Electric Properties of Post-Annealed Graphene: In₂O₃:ZnO Thin Film;ECS Journal of Solid State Science and Technology;2024-07-01

2. The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process;Nanomaterials;2024-04-17

3. Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers;ACS Omega;2020-08-19

4. Effect of Sputtering Working Pressure on the Optical and Electrical Properties of InZnO Thin-Film Transistors;Korean Journal of Materials Research;2020-04-30

5. Amorphous InZnO:Li/ZnSnO:Li dual-active-layer thin film transistors;Materials Research Bulletin;2019-03

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