Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2924769
Reference22 articles.
1. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
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3. Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes
4. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
5. ZnO-based transparent thin-film transistors
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