Properties optimization with high nitrogen content doping for InGaZnO films deposited by reactive sputtering with a GaN-embedded cermet target-Reference-Cited by-同舟云学术

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Properties optimization with high nitrogen content doping for InGaZnO films deposited by reactive sputtering with a GaN-embedded cermet target

Published:2018-11 Issue: Volume:86 Page:122-127
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kuo Dong-Hau^ORCID,Huang Yu-Kai,Hsueh Tien Hsiang,Jan Der-Jun

Funder

Ministry of Science and Technology of the Republic of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Oxide semiconductor thin-film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

2. Present status of amorphous In–Ga–Zn–O thin-film transistors;Kamiya;Adv. Mater.,2010

3. Amorphous gallium indium zinc oxide thin film transistors: sensitive to oxygen molecules;Kang;Appl. Phys. Lett.,2007

4. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors;Jeong;Appl. Phys. Lett.,2008

5. Comparison of ultraviolet photo-field effects between hydrogenated amorphous silicon and amorphous InGaZnO4thin-film transistors;Takechi;Jpn. J. Appl. Phys.,2009

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1. Orientation-dependent Electrical and Optical Characteristics of non-epitaxial Al-doped ZnO thin films;Ceramics International;2024-07

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