Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs-Reference-Cited by-同舟云学术

Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs

Published:2015-11 Issue: Volume:147 Page:159-164
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chang S.-J.,Bawedin M.,Andrieu F.,Navarro C.,Kim Y.T.,Bae Y.,Cristoloveanu S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. C. Gallon, Solutions Alternatives Avancées pour les Prochaines Générations de Transistor CMOS SOI Complètement Déplété à Simple Grille (dissertation), INPG, 2007.

2. C. Maleville, in: 2011 International Symposium on VLSI Technology, Systems and Applications, 2011, pp. 1–4.

3. L. Grenouillet, M. Vinet, J. Gimbert, B. Giraud, J.P. Noel, et al., in: IEEE International Electron Devices Meeting, 2012, pp. 3.6.1–3.6.4.

4. New method for the extraction of MOSFET parameters

5. Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intrinsic Mechanism of Mobility Collapse in Short MOSFETs;IEEE Transactions on Electron Devices;2021-10

2. Scaling effects;Fully Depleted Silicon-On-insulator;2021

3. Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs;IEEE Electron Device Letters;2017-04

4. A review of electrical characterization techniques for ultrathin FDSOI materials and devices;Solid-State Electronics;2016-03

5. Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors;Japanese Journal of Applied Physics;2016-02-29