Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

Published:2016-02-29 Issue:4 Volume:55 Page:044104
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang Sung-Jae,Kang Hee-Sung,Lee Jae-Hoon,Yang Jie,Bhuiyan Maruf,Jo Young-Woo,Cui Sharon,Lee Jung-Hee,Ma Tso-Ping

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4/a=044104/pdf

Reference29 articles.

1. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

2. Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

3. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

4. Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

5. Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator;Nanomaterials;2023-02-27

2. Cryogenic Power Electronics;Electrified Aircraft Propulsion;2022-05-26

3. Method for noncontact measurement of 2DEG mobility and carrier density in AlGaN/GaN on semi-insulating wafers;Japanese Journal of Applied Physics;2022-01-21

4. Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors;Crystals;2021-11-19

5. Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer;Nanomaterials;2020-10-30

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3