Intrinsic Mechanism of Mobility Collapse in Short MOSFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9546692/09523514.pdf?arnumber=9523514
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2. Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology;IEEE Journal of the Electron Devices Society;2024
3. Characterization and compact modeling of short channel MOSFETs at cryogenic temperatures;Solid-State Electronics;2023-06
4. Investigation of temperature for the stacked Ferroelectric Heterojunction TFET(Fe-HTFET) on box substrate;Micro and Nanostructures;2023-05
5. Effective Channel Mobility Extraction and Modeling of 10-nm Bulk CMOS FinFETs in Cryogenic Temperature Operation for Quantum Computing Applications;IEEE Transactions on Electron Devices;2023-04
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