Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories-Reference-Cited by-同舟云学术

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

Published:2008-12 Issue:12 Volume:85 Page:2393-2399
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Molas G.,Bocquet M.,Buckley J.,Grampeix H.,Gély M.,Colonna J.P.,Martin F.,Brianceau P.,Vidal V.,Bongiorno C.,Lombardo S.,Pananakakis G.,Ghibaudo G.,De Salvo B.,Deleonibus S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

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5. Highly manufacturable 32Gb multi-level NAND flash memory with 0.0098μm2 cell size using TANOS (Si–Oxide–Al2O3–TaN) cell technology;Park;Tech. Dig. IEDM,2006

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3. The effect of annealing atmosphere on the (HfO2)0.9(Al2O3)0.1 based charge trapping nonvolatile memory;Vacuum;2014-01

4. Properties of HfAlO film deposited by plasma enhanced atomic layer deposition;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

5. Influence of atomic layer deposition chemistry on high-k dielectrics for charge trapping memories;Solid-State Electronics;2012-02