Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
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1. Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks;Journal of Materials Science & Technology;2019-05
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3. Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel;Chinese Physics Letters;2018-05
4. Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature;Journal of Alloys and Compounds;2017-01
5. Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate;Applied Surface Science;2016-12
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