Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)-Reference-Cited by-同舟云学术

Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)

Published:2009-07 Issue:7-9 Volume:86 Page:1876-1882
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Grasser T.,Kaczer B.,Goes W.,Aichinger Th.,Hehenberger Ph.,Nelhiebel M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. V. Huard, C. Parthasarathy, N. Rallet, C. Guerin, M. Mammase, D. Barge, C. Ouvrard, in: Proceedings of the IEDM, 2007, pp. 797–800.

2. B. Kaczer, T. Grasser, P. Roussel, J. Martin-Martinez, R. O’Connor, B. O’Sullivan, G. Groeseneken, in: Proceedings of the IRPS, 2008, pp. 20–27.

3. T. Grasser, in: Proceedings of the IRPS, 2008, (Tutorial).

4. A comprehensive model for PMOS NBTI degradation: Recent progress

5. T. Grasser, B. Kaczer, T. Aichinger, W. Goes, M. Nelhiebel, IIRW Final Report, 2008.

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Overview of the NBTI Phenomenon in MOS Devices;Russian Microelectronics;2023-10

2. Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO₂ interface;Journal of Physics D: Applied Physics;2023-02-16

3. Impact of post-nitridation annealing in CO₂ ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors;Applied Physics Express;2022-05-24

4. Integral impact of PVT variation with NBTI degradation on dynamic and static SRAM performance metrics;International Journal of Electronics;2021-04-11

5. Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs;Physical Review Applied;2020-02-10