Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology-Reference-Cited by-同舟云学术

Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology

Published:2010-12 Issue:12 Volume:87 Page:2625-2628
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kuo Chien-I,Hsu Heng-Tung,Wu Chien-Ying,Chang Edward Y.,Chen Yu-Lin,Lim Wee-Chin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

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3. Advanced mHEMT MMICs for 220 GHz high-resolution imaging systems

4. K.-S. Seo, D.H. Kim, in: Proc. 18th International Conference on Indium Phosphide and Related Materials, 2006, pp. 30–35.

5. K. Shinohara, P.S. Chen, J. Bergman, H. Kazemi, B. Brar, I. Watanabe, T. Matsui, Y. Yamashita, A. Endoh, K. Hikosaka, T. Mimura, S. Hiyamizu, in: IEEE Microwave Symposium Digest, 2006, pp. 337–340.

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2. Noise analysis of double gate composite InAs based HEMTs for high frequency applications;Microsystem Technologies;2020-07-22

3. Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT;Journal of Computational Electronics;2019-06-27

4. Sheet‐carrier density and I‐V analysis of In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As dual channel double gate HEMT for THz applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-05-30

5. Plume propagation and Pt film growth during shadow-masked pulsed laser deposition in a buffer Ar gas;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-01