A theoretical study of gating effect on InP-InGaAs HEMTs by tri-layer T–shape gate

Author:

Deng Jianan,Shao Jinhai,Wan Jing,Lu Bingrui,Chen Yifang

Funder

National Natural Science Foundation of China

Basic Research Project of Shanghai Science and Technology Innovation Action

Fudan University-CIOMP Joint Fund

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. InGaAs 3D MOSFETs with drastically different shapes formed by anisotropic wet etching;Zhang,2015

2. Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs;Shin,2014

3. Study of InGaAs-channel MOSFETs for Analog/mixed-signal system-on-Chip applications;Tewari;IEEE Electron Device Lett.,2012

4. Sub-10-nm-diameter InGaAs vertical nanowire MOSFETs: Ni versus Mo contacts;Zhao;IEEE Trans. Electron Devices,2018

5. A Si-compatible fabrication process for scaled self-aligned InGaAs FinFETs;Vardi;IEEE Trans. Semicond. Manuf.,2017

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