UV-induced modification of fluorocarbon for improvement of subsequent wet removal-Reference-Cited by-同舟云学术

UV-induced modification of fluorocarbon for improvement of subsequent wet removal

Published:2014-02 Issue: Volume:114 Page:136-140
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Le Q.T.,Simms I.,Yue H.,Brown I.,Kesters E.,Vereecke G.,Struyf H.,De Gendt S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Patterning of narrow porous SiOCH trenches using a TiN hard mask

2. Effect of UV Irradiation on Modification and Subsequent Wet Removal of Model and Post-Etch Fluorocarbon Residues

3. Wet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process

4. Structures and properties of fluorinated amorphous carbon films

5. Effect of Additives in Organic Acid Solutions for Post-CMP Cleaning on Polymer Low-k Fluorocarbon

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1. Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models;Applied Physics Reviews;2019-03

2. Characterization of Patterned Porous Low-kDielectrics: Surface Sealing and Residue Removal by Wet Processing/Cleaning;ECS Journal of Solid State Science and Technology;2016

3. UV-Assisted Modification and Removal Mechanism of a Fluorocarbon Polymer Film on Low-k Dielectric Trench Structure;ACS Applied Materials & Interfaces;2015-02-24