Characterization of Patterned Porous Low-kDielectrics: Surface Sealing and Residue Removal by Wet Processing/Cleaning-Reference-Cited by-同舟云学术

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Characterization of Patterned Porous Low-kDielectrics: Surface Sealing and Residue Removal by Wet Processing/Cleaning

Published:2016 Issue:3 Volume:5 Page:N5-N9
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Le Q. T.,Kesters E.,Decoster S.,Chan B. T.,Nguyen M. P.,Conard T.,Vanleenhove A.,Holsteyns F.,De Gendt S.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Advanced Interconnects for ULSI Technology

2. Plasma processing of low-k dielectrics

3. Patterning of narrow porous SiOCH trenches using a TiN hard mask

4. Effect of UV Irradiation on Modification and Subsequent Wet Removal of Model and Post-Etch Fluorocarbon Residues

5. Etching of porous SiOCH materials in fluorocarbon-based plasmas

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A non-destructive, fast evaluation of PVD diffusion barriers deposited on porous low-k dielectrics;Microelectronic Engineering;2018-10

2. Formation and Wet Removal of Organic and Titanium-Containing Residues on Patterned TiN/Porous Low-k Structure;ECS Journal of Solid State Science and Technology;2018

3. Characterization of Etch Residues Generated on Damascene Structures;Solid State Phenomena;2016-09

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