Numerical simulation and analysis of process parameters of GaN-MOCVD reactor-Reference-Cited by-同舟云学术

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Numerical simulation and analysis of process parameters of GaN-MOCVD reactor

Published:2018-02 Issue: Volume:91 Page:64-76
ISSN:0735-1933
Container-title:International Communications in Heat and Mass Transfer
language:en
Short-container-title:International Communications in Heat and Mass Transfer

Author:

Li Jian,Wang Jie,Cai Jian-dong,Xu Yi-feng,Fan Bing-feng,Wang Gang

Funder

National Natural Science Funds for Distinguished Young Scholars

Natural Funds of Guangdong Province

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Chemical Engineering,Atomic and Molecular Physics, and Optics

Reference39 articles.

1. Organometallic Vapor-Phase Epitaxy: Theory and Practice;Stringfellow,1999

2. Semiconductor Devices: Physics and Technology;Sze,2003

3. Different growth behaviors of GaN nanowires grown with Au catalyst and Au+Ga solid solution nano-droplets on Si(111) substrates by using MOCVD;Navamathavan;Curr. Appl. Phys.,2011

4. Simultaneous light emission and detection of InGaN/GaN multiple quantum well diodes for in-plane visible light communication;Wang;Opt. Commun.,2017

5. Enhanced visible light absorption in ZnO/GaN heterostructured nanofilms;Zhang;J. Alloys Compd.,2017

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1. The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges;Applied Physics Reviews;2024-09-01

2. Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride;Journal of Vacuum Science & Technology A;2023-10-31

3. Design Optimization of Gas Distribution System for Large‐Scale Capacity GaAs‐MOCVD;Crystal Research and Technology;2023-10-10

4. Study on Motion and Deposition of Nanoparticles in Rotary MOCVD Reactors of Gallium Nitride;Crystals;2023-08-30

5. Design of large horizontal gallium nitride hydride vapor-phase epitaxy equipment and optimization of process parameters;Journal of Crystal Growth;2023-07

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