Study on Motion and Deposition of Nanoparticles in Rotary MOCVD Reactors of Gallium Nitride

Abstract

Nanoparticles have a negative effect on the preparation of Gallium Nitride (GaN) by Metal-Organic Chemical Vapor Deposition (MOCVD). We developed a particle tracking and particle-wall collision model coupled with the bulk gas flow solver to investigate the motion and deposition of nanoparticles in single-wafer and multi-wafer reactors. The results indicated that for the single-wafer reactor, there is no particle deposition on the reactor wall and susceptor, but there is the endless movement of some particles within the reactor, which should be avoided. For the multi-wafer reactors, some of the nanoparticles are deposited near the axis, and those whose initial position is beyond a certain position from the axis are trapped in a vortex above the receptor, resulting in more complex by-products, although no particles are trapped in endless motion. Moreover, the effects of the rotational speed of the susceptor on the deposition rate for both the single-wafer reactor and the multi-wafer reactor were also simulated and analyzed.