Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. 320×256 solar-blind focal plane arrays based on AlxGa1−xN
2. High-quality and crack-free AlxGa1−xN (x∼0.2) grown on sapphire by a two-step growth method
3. Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study
4. AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition
5. Growth of AlGaN epilayers related gas-phase reactions using TPIS-MOCVD
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