Author:
Iglesias V.,Lanza M.,Bayerl A.,Porti M.,Nafría M.,Aymerich X.,Liu L.F.,Kang J.F.,Bersuker G.,Zhang K.,Shen Z.Y.
Funder
Spanish MICINN
Generalitat de Catalunya
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Identification of a determining parameter for resistive switching of TiO2 thin films
2. Study on the resistive switching time of TiO2 thin films
3. Electrical current distribution across a metal–insulator–metal structure during bistable switching
4. Baek IG, Lee MS, Seo S, Lee MJ, Seo DH, Suh DS, et al. In: Proceedings of the 2004 International electron device meeting, IEEE, San Francisco, CA, December 13–15, 2004. p. 587.
5. Who Wins the Nonvolatile Memory Race?
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