Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Experimental study of 650V Algan/Gan HEMT short-circuit safe operating area (SCSOA);Huang,2014
2. [131] Experimental study of the short-circuit robustness of 600V E-mode GaN transistors;Landel;Microelectron. Reliab.,2016
3. Experimental study of the short-circuit capability of a 600V normally-off P-gate Gan HEMT;Oeder,2017
4. Thermal instability during short circuit of normally-off AlGaN/GaN {HFETs};Abbate;Microelectron. Reliab.,2013
5. Thermal stability and failure mechanism of schottky gate algan/gan HEMTs;Mocanu;IEEE Trans. Electron Devices,2017
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献