[131] Experimental study of the short-circuit robustness of 600V E-mode GaN transistors-Reference-Cited by-同舟云学术

[131] Experimental study of the short-circuit robustness of 600V E-mode GaN transistors

Published:2016-09 Issue: Volume:64 Page:560-565
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Landel M.,Gautier C.,Labrousse D.,Lefebvre S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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2. Libiao Yu, Samuel Araújo, Douglas Pappis, Peter Zacharias, Short-circuit capability: benchmarking SiC and GaN devices with Si-based technologies, PCIM Eur. 2015, 19–21 May 2015

3. Investigations of 600V GaN HEMT and GaN Diode for power converter application;Mitova;IEEE Trans. Power Electron.,2013

4. Thermal instability during short circuit of normally-off AlGaN/GaN HFETs;Abbate;Microelectron. Reliab.,2013

5. Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modesand comparison with BJTs;Cheng;Microelectron. Reliab.,2015

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