Author:
Landel M.,Gautier C.,Lefebvre S.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Current status and future trends of GaN HEMTs in electrified transportation;Keshmiri;IEEEAccess,2020
2. Review of commercial GaN power devices and GaN-based converter design challenges;Jones;IEEE J. Emerg. Sel. Top. Power Electron.,2016
3. Breakthrough short circuit robustness demonstrated in vertical GaN Fin JFET;Zhang;IEEE Trans. Power Electron.,2022
4. Exceptional repetitive-short-circuit robustness of vertical GaN Fin-JFET at high voltage;Zhang,2022
5. Short circuit capability characterization and analysis of p-GaN gate high-electron-mobility transistors under single and repetitive tests;Sun;IEEE Trans. Ind. Electron.,2021
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献