Online die temperature measurement using S-parameters in GaN-based power converters-Reference-Cited by-同舟云学术

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Online die temperature measurement using S-parameters in GaN-based power converters

Published:2023-11 Issue: Volume:150 Page:115085
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Pascal Yoann,Daschner Frank,Mönch Stefan,Liserre Marco,Höft Michael,Quay Rüdiger

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Research on active thermal control: actual status and future trends;Kuprat;IEEE J. Emerg. Sel. Top. Power Electron.,2021

2. Study of short-circuit robustness of p-GaN and cascode transistors;Landel;Microelectron. Reliab.,2022

3. Stability and reliability of lateral GaN power field-effect transistors;del Alamo;IEEE Trans. Electron Devices,2019

4. Reviewing thermal-monitoring techniques for smart power modules;Kalker;IEEE J. Emerg. Sel. Top. Power Electron.,2022

5. Static and dynamic TSEPs of SiC and GaN transistors;Zhu,2018

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