Author:
Danesin Francesca,Tazzoli Augusto,Zanon Franco,Meneghesso Gaudenzio,Zanoni Enrico,Cetronio Antonio,Lanzieri Claudio,Lavanga Simone,Peroni Marco,Romanini Paolo
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. AlGan/Gan HEMTs – An overview of device operation and applications;Mishra;Proc IEEE,2002
2. Meneghesso G et al. Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTS on SiC. Proc IRPS, 2005. p. 415–22.
3. Sozza A et al. Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000h On-state and Off-state Hot-electron Stress. IEDM, December 2005.
4. Joh J et al. Mechanisms for electrical degradation of GaN high-electron mobility transistors. IEDM, December 2006.
5. Surface-related drain–current dispersion effects in AlGaN–GaN HEMTs;Meneghesso;IEEE Trans Elect Devices,2004
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