Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology-Reference-Cited by-同舟云学术

Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology

Published:2014-06 Issue:6-7 Volume:54 Page:1163-1168
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Tam Wing-Shan,Kok Chi-Wah,Siu Sik-Lam,Wong Hei

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

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4. Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS;Moens;Microelectron Reliab,2008

5. ESD protection strategies in advanced CMOS SOI ICs;Khazhinsky;Microelectron Reliab,2007

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