Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview-Reference-Cited by-同舟云学术

Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview

Published:1999-05 Issue:5 Volume:39 Page:579-593
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lee J.C.,Croft G.D.,Liou J.J.,Young W.R.,Bernier J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Merrill R, Issaq E. ESD design methodology. EOS/ESD Symposium Proceedings 993. pp. 233–237

2. Electrostatic damage control efforts: An expense or an investment. Published by ADE Inc., Revised edition, 1990

3. Charged device model testing; try to duplicate reality;Avery,1987

4. Very-fast transmission line pulsing of integrated structures and the charged device model;Gieser,1996

5. A combined socketed and non-socketed CDM test approach for eliminating real-world CDM failures;Olney,1996

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Optical Measurement Method for Electrostatic Sensing Based on Fabry-Perot Sensing System;2024 IEEE 5th International Conference on Dielectrics (ICD);2024-06-30

2. Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology;Microelectronics Reliability;2014-06

3. Analysis of ESD discharge current distribution and area optimization of VDMOS gate protection structure;Microelectronics Reliability;2010-05

4. Device Characterization;ESD Design and Analysis Handbook;2003

5. An improved experimental setup for electrostatic discharge (ESD) measurements based on transmission line pulsing technique;IEEE Transactions on Instrumentation and Measurement;2001