Author:
Li Pei,He ChaoHui,Guo HongXia,Zhang JinXin,Li YongHong,Wei JiaNan
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Radiation effects in SiGe technology;Cressler;Transactions on Nuclear Science,2013
2. Total dose and transient response of SiGe HBTs from a new 4th-generation, 90 nm SiGe BiCMOS technology;Lourenco,2012
3. Proton and gamma radiation effects in a new first-generation SiGe HBT technology;Haugerud;Solid State Electron.,2006
4. An investigation of ELDRS in different SiGe processes;Pei;IEEE Trans. Nucl. Sci.,2017
5. Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application;Sun;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,2014
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献