Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. On the Potential of SiGe HBTs for Extreme Environment Electronics
2. Radiation Effects in SiGe Technology
3. J.D. Cressler, Proceedings of the International Semiconductor Device Research Symposium, 2007, p. 1.
4. J.D. Cressler, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005, p. 248.
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