The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors-Reference-Cited by-同舟云学术

The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors

Published:2013-04 Issue:4 Volume:168 Page:253-263
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Sun Ya-Bin,Fu Jun,Xu Jun,Wang Yu-Dong,Yang Ji,Zhou Wei,Zhang Wei,Cui Jie,Li Gao-Qing,Liu Zhi-Hong,Wei Su-Min,Wang Feng,Guan Feng-Ping,Li Peng-Zhan,Zhang Tian-Jue

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2013.763805

Reference17 articles.

1. Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD

2. Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs

3. X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI

4. Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications

5. The effects of operating bias conditions on the proton tolerance of SiGe HBTs

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