Author:
Zhang R.,Yang K.X.,Liu T.Z.,Milor L.
Funder
National Science Foundation
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Investigation of hot carrier degradation in bulk FinFET;Chung,2017
2. A novel front-end-of-line (FEOL) and middle-of-line (MOL) time-dependent dielectric breakdown lifetime simulator for FinFET technology;Yang,2018
3. A comprehensive time-dependent dielectric breakdown lifetime simulator for both traditional CMOS and FinFET technology;Yang;IEEE Trans. Very Large Scale Integr. VLSI Syst.,2018
4. Estimation of the optimal accelerated test region for FinFET SRAMs degraded by front-end and back-end wearout mechanisms;Zhang;Proc. Des. Circuits Integ. Syst. Conf.,2018
5. New electromigration model and its potential application on degradation simulation for FinFET SRAM;Zhang;Proc. Int. Integr. Reliab. Workshop,2018
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