Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy-Reference-Cited by-同舟云学术

Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy

Published:2010-09 Issue:9-11 Volume:50 Page:1528-1531
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Rao Hemant,Bosman Gijs

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

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3. SiC and sapphire substrates;Curutchet;Microelectron Reliab,2003

4. Sury C, Curutchet A, Malbert N, Labat N, Macucci M, Basso G. Low frequency noise evolution of AlGaN/GaN HEMT after 2000h of HTRB and HTO life tests. In: AIP conference proceedings, Pisa (Italy); 2009. p. 625–8.

5. AlGaN/GaN HEMT reliability assessment by means of low frequency noise measurements;Sozza;Microelectron Reliab,2006

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