AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements-Reference-Cited by-同舟云学术

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Published:2006-09 Issue:9-11 Volume:46 Page:1725-1730
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Sozza A.,Curutchet A.,Dua C.,Malbert N.,Labat N.,Touboul A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

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2. X-band radar is set to reap benefits of GaN technology, Compound Semiconductors, March 2005.

3. Noise as a diagnostic tool for quality and reliability of electronic devices;Vandamme;IEEE Trans. Electr. Devices,1994

4. Malbert N et al. Low frequency noise as early indicator of degradation in compound semiconductor FETs and HBTs, 17th International Conference on Noise in Physical Systems and 1/f Fluctuations, Prague (Czech Republic), p. 67–73, August 2003.

5. Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors;Labat;Microelectronics Reliability,2004

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1. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors;Chinese Physics Letters;2013-12

2. Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements;Applied Physics Letters;2013-07-22

3. IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors;Microelectronics Reliability;2012-09

4. Strain Effects in AlGaN/GaN HEMTs;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23

5. Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2012-04-02