The Characterization of InAlN/AlN/GaN HEMTs Using Silicon-on-Insulator (SOI) Substrate Technology-Reference-Cited by-同舟云学术

The Characterization of InAlN/AlN/GaN HEMTs Using Silicon-on-Insulator (SOI) Substrate Technology

Published:2015-11-28 Issue:2 Volume:163 Page:H110-H114
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Chiu Hsien-Chin,Peng Li-Yi,Wang Hou-Yu,Wang Hsiang-Chun,Kao Hsuan-Ling,Lee G.-Y.,Chyi Jen-Inn

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. High-power AlGaN/GaN HEMTs for Ka-band applications

2. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

3. 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

4. High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

5. 45-nm CMOS SOI Technology Characterization for Millimeter-Wave Applications;Inac;Student Member, IEEE,2014

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1. Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator;ECS Journal of Solid State Science and Technology;2023-02-01

2. Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate;Semiconductor Science and Technology;2022-06-01

3. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration;Micromachines;2021-09-27

4. MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain;Semiconductor Science and Technology;2017-03-06