Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement-Reference-Cited by-同舟云学术

Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement

Published:2016-03-30 Issue:5 Volume:55 Page:056502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chiu Hsien-Chin,Peng Li-Yi,Wang Hou-Yu,Wang Hsiang-Chun,Kao Hsuan-Ling,Chien Feng-Tso,Lin Jia-Ching,Chang Kuo-Jen,Cheng Yi-Cheng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5/a=056502/pdf

Reference30 articles.

1. Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications

2. High Power GaN-HEMT for Wireless Base Station Applications

3. Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

4. A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate

5. Tri-Gate Normally-Off GaN Power MISFET

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3. Reliability Studies on AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Through-Substrate via Technique and Backside Heat Sink Metal on Silicon-on-Insulator Substrates;ECS Journal of Solid State Science and Technology;2018