A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory

Author:

Rodriguez-Fernandez A.,Muñoz-Gorriz J.,Suñé J.,Miranda E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Memristive devices for computing;Joshua Yang;Nanotechnology,2013

2. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling;Ielmini;Semicond. Sci. Technol.,2016

3. Modeling the universal set/reset characteristics of bipolar RRAM by field- and temperature-driven filament growth;Ielmini;IEEE Trans. Electron Devices,2011

4. Heat transfer in filamentary RRAM devices;Niraula;IEEE Trans. Electron Devices,2017

5. Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials;Pazos;J. Appl. Phys.,2017

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