Simulation of Bipolar-Type Resistive Switching Devices Using a Recursive Approach to the Dynamic Memdiode Model-Reference-Cited by-同舟云学术

Simulation of Bipolar-Type Resistive Switching Devices Using a Recursive Approach to the Dynamic Memdiode Model

Published:2023-09 Issue:9 Volume:44 Page:1551-1554
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Miranda E.¹^ORCID,Piros E.²^ORCID,Aguirre F. L.¹,Kim T.²,Schreyer P.²^ORCID,Gehrunger J.³^ORCID,Oster T.³,Hofmann K.³,Suñé J.¹^ORCID,Hochberger C.³^ORCID,Alff L.²^ORCID

Affiliation:

1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra, Cerdanyola del Vallès, Spain

2. Institute of Materials Science, Technische Universiät Darmstadt, Darmstadt, Germany

3. Department of Electrical and Information Engineering, Technische Universität Darmstadt (TUD), Darmstadt, Germany

Funder

Merck KGaA, Darmstadt, Germany, in the framework of the joint research platform by the company and Technische Universität (TU) Darmstadt called “Sustainability Hub;”

TU Darmstadt Research Fellowship Program

Ministerio de Ciencia e Innovación, Spain

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10230308/10190769.pdf?arnumber=10190769

Reference38 articles.

1. Uniform Approximations for Transcendental Functions

2. Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

3. On the LambertW function

4. Intrinsic RESET Speed Limit of Valence Change Memories

5. Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

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