Intrinsic RESET Speed Limit of Valence Change Memories-Reference-Cited by-同舟云学术

Intrinsic RESET Speed Limit of Valence Change Memories

Published:2021-12-13 Issue:12 Volume:3 Page:5563-5572
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

von Witzleben Moritz¹²^ORCID,Wiefels Stefan²,Kindsmüller Andreas¹,Stasner Pascal¹,Berg Fenja¹,Cüppers Felix³,Hoffmann-Eifert Susanne³^ORCID,Waser Rainer¹²³,Menzel Stephan²^ORCID,Böttger Ulrich¹^ORCID

Affiliation:

1. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraßze 24, D-52 074 Aachen, Germany

2. Peter Grünberg Institut 7, Forschungszentrum Jülich and JARA-FIT, Wilhelm Johnen Straßze, D-52 428 Jülich, Germany

3. Peter Grünberg Institut 10, Forschungszentrum Jülich and JARA-FIT, Wilhelm Johnen Straßze, D-52 428 Jülich, Germany

Funder

Bundesministerium f??r Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00981

Reference71 articles.

1. The future of electronics based on memristive systems

2. Redox-based memristive devices for new computing paradigm

3. Emerging neuromorphic devices

4. Neuro-inspired computing chips

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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