Research on single event effect test of a RRAM memory and space flight demonstration-Reference-Cited by-同舟云学术

Research on single event effect test of a RRAM memory and space flight demonstration

Published:2021-11 Issue: Volume:126 Page:114347
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lyu He,Zhang Hongwei,Mei Bo,Yu Qingkui,Mo Rigen,Sun Yi,Gao Wu

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Technological exploration of RRAM crossbar Array for matrix-vector multiplication;Xia;J. Comput. Sci. Technol.,2016

2. Evaluation of recent technologies of nonvolatile RAM;Nuns;IEEE Trans. Nucl. Sci.,2008

3. Resistive random access memory for future information processing system;Wu;Proc. IEEE,2017

4. Development of materials and devices for cation-migration-based resistive random access memory;Gao;Mater. Sci. Technol.,2016

5. Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays;Chen;Scr. Mater.,2020

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaO -based MOS capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09

2. Fabrication and Characterization of Alumina Based Resistive RAM for Space Applications;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

3. Influence of metal electrodes on the irradiation resistance of HZO ferroelectric thin film capacitors and mechanism analysis;Journal of Alloys and Compounds;2024-03

4. Computer simulation of radiation effects on high-speed non-volatile memory;Modeling of systems and processes;2022-10-05

5. Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory;2022 IEEE 6th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC );2022-10-03