Funder
Japan Society for the Promotion of Science
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015
2. Defect engineering in SiC technology for high-voltage power devices;Kimoto;Appl. Phys. Express,2020
3. Theoretical investigation of the interface fluctuation causing low channel conductivity at SiO2/SiC interfaces through the self-energy and average Green’s function;Yoshioka;AIP Adv.,2019
4. Two-dimensional defect mapping of the SiO2/4H-SiC interface;Woerle;Phys. Rev. Mater.,2019
5. Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations;Sometani;Appl. Phys. Lett.,2019
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献