Study on atomic migration of copper through-silicon-vias with Bosch scallops-Reference-Cited by-同舟云学术

Study on atomic migration of copper through-silicon-vias with Bosch scallops

Published:2021-08 Issue: Volume:123 Page:114178
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Cheng Zhiqiang,Ding Yingtao,Xiao Lei,Yang Baoyan,Chen Zhiming

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference37 articles.

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3. Three-dimensional and 2.5 dimensional interconnection technology: state of the art;Liu;J. Electron. Packag.,2014

4. Through-silicon vias: drivers performance and innovations;Thadesar;IEEE Trans. Comp. Packag. Manuf. Technol.,2016

5. Engineered substrates for future more Moore and more than Moore integrated devices;Clavelier,2010

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1. Electro-Thermal Reliability Analysis of Electromigration in 3-D TSV-RDL Interconnects;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024

2. A Short Review of Through-Silicon via (TSV) Interconnects: Metrology and Analysis;Applied Sciences;2023-07-18

3. Research on SiP Assessment Methods for High Reliability Applications;2022 10th International Symposium on Next-Generation Electronics (ISNE);2023-05-12

4. Parasitic effect analysis on TSV design factors;2022 IEEE 24th Electronics Packaging Technology Conference (EPTC);2022-12-07

5. Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes;Journal of Electronic Materials;2022-03-02