Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art

Author:

Liu Dapeng1,Park Seungbae1

Affiliation:

1. Mechanical Engineering, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902 e-mail:

Abstract

Three-dimensional (3D) packaging with through-silicon-vias (TSVs) is an emerging technology featuring smaller package size, higher interconnection density, and better performance; 2.5D packaging using silicon interposers with TSVs is an incremental step toward 3D packaging. Formation of TSVs and interconnection between chips and/or wafers are two key enabling technologies for 3D and 2.5D packaging, and different interconnection methods in chip-to-chip, chip-to-wafer, and wafer-to-wafer schemes have been developed. This article reviews state-of-the-art interconnection technologies reported in recent technical papers. Issues such as bump formation, assembly/bonding process, as well as underfill dispensing in each interconnection type are discussed.

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference81 articles.

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4. He, R., Wang, H., Zhou, J., Guo, X., Yu, D., and Wan, L., 2011, “Nonlinear Thermo-Mechanical Analysis of TSV Interposer Filling With Solder, Cu and Cu-Cored Solder,” 12th International Conference on Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), Shanghai, August 8–11. 10.1109/ICEPT.2011.6066824

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